CMF20120D View Datasheet(PDF) - Cree, Inc
Part Name
Description
MFG CO.
'CMF20120D' PDF : 8 Pages View PDF
Typical Performance
700
600
VGS = 0/20V
RG = 7.5 Ω Tot
VDD = 800V
L = 856 µH
500
FWD: C4D10120
TA = 25oC
400
ETOT,SW
300
200
EOFF
100
EON
0
0
5
10
15
20
Peak Drain Current (A)
Figure 18. Clamped Inductive Switching Energy vs.
Drain Current (Fig. 20)
1,000
900
ETOT,SW
800
700
600
500
EON
400
300
VGS = 0/20V
200
RG = 11.8 Ω Tot
VDD = 800V
L = 856 µH
100
FWD: C4D10120
ID = 20 A
0
EOFF
0
25
50
75
100
125
150
TJ (oC)
Figure 19. Clamped Inductive Switching Energy vs.
Junction Temperature (Fig 20)
+
800V
-
42.3μf
856μH
C4D10120D
10A, 1200V
SiC Schottky
CMF20120D
Figure 20. Clamped Inductive Switching Waveform Test
Circuit
VDS
90%
VGS
td(on)v
tfv
ton
td(off)v
trv
toff
10%
Figure 21. Switching Test Waveforms for Transition times
6
CMF20120D Rev. D
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