CY8C20110 View Datasheet(PDF) - Cypress Semiconductor
Part Name
Description
MFG CO.
'CY8C20110' PDF : 46 Pages View PDF
CY8C20110, CY8C20180
CY8C20160, CY8C20140
CY8C20142
Absolute Maximum Ratings
Parameter
Description
Min
Typ
Max Unit
Notes
TSTG
Storage temperature
–55
25
+100
°C Higher storage temperatures
reduce data retention time.
Recommended storage
temperature is +25 °C ± 25 °C (0 °C
to 50 °C). Extended duration
storage temperatures above 65 °C
degrade reliability
TBAKETEMP
Bake temperature
–
125
See
°C
Package
label
tBAKETIME
Bake time
See
–
package
label
72 Hours
TA
Ambient temperature with power –40
–
+85
°C
applied
VDD
VIO
VIOZ
IMIO
Supply voltage on VDD relative to –0.5
–
+6.0
V
VSS
DC input voltage
VSS – 0.5
–
VDD + 0.5 V
DC voltage applied to tristate
VSS – 0.5
–
VDD + 0.5 V
Maximum current into any GPIO –25
–
+50
mA
pin
ESD
Electro static discharge voltage
2000
–
–
V Human body model ESD
LU
Latch-up current
–
–
200
mA
Operating Temperature
Parameter
TA
TJ
Description
Ambient temperature
Junction temperature
Min
Typ
Max Unit
–40
–
+85
°C
–40
–
+100
°C
Notes
Document Number: 001-54606 Rev. *J
Page 22 of 46
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