D526 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Part Name

Description

MFG CO.

D526

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

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SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 80V(Min)

·Good Linearity of hFE

·Collector Power Dissipation-

: PC= 30W(Max)@ TC= 25℃

·Complement to Type 2SB596

APPLICATIONS

·Designed for power amplifier applications.

·Recommended for 20~25W high fidelity audio frequency

amplifier output stage applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

80

V

VCEO

Collector-Emitter Voltage

80

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

4

A

IB

Base Current-Continuous

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

0.4

A

30

W

150

℃

Tstg

Storage Temperature Range

-55~150

℃

SPTECH website：www.superic-tech.com

2SD526

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