DG200BA View Datasheet(PDF) - Harris Semiconductor
Part Name
Description
MFG CO.
'DG200BA' PDF : 8 Pages View PDF
Metallization Topology
DIE DIMENSIONS:
74 x 77 x 14 ± 1mils
METALLIZATION:
Type: Al
Thickness: 10kÅ ± 1kÅ
GLASSIVATION:
Type: SiO2/Si3N4
SiO2 Thickness: 7kÅ ± 1.4kÅ
Si3N4 Thickness: 8kÅ ± 1.2kÅ
WORST CASE CURRENT DENSITY:
1 x 105 A/cm2
Metallization Mask Layout
D1
(9)
DG200
DG200
V-
D2
(7)
(6)
S1 (10)
V- (SUBSTRATE)* (12)
(5) S2
(14)
(1)
IN1
IN2
* Backside of Chip is V+
(3)
GND
9-19
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