EC2612 View Datasheet(PDF) - United Monolithic Semiconductors

Part Name

Description

MFG CO.

EC2612

40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor

United Monolithic Semiconductors 

1 2 3 4 5 6 7 8

EC2612

40GHz Super Low Noise PHEMT

Symbol

Idss

Vp

Gm

Igsd

Parameter

Saturated drain current

Pinch off voltage

Transconductance

Gate to source/drain leakage

current

Test

Conditions

Vds = 2V

Vgs = 0V

Vds = 2V

Ids = 0.1mA

Vds = 2V

Ids = 25mA

Vgsd = -2V

Min Typ Max Unit

10 35 60 mA

-1.0 -0.7 -0.3 V

50 70

mS

5 µA

Dynamic characteristics

Tamb=25°C

Symbol

Parameter

Test

Conditions

Min Typ. Max Unit

F= 12GHz

0.5 0.7 dB

NF

Minimum noise figure

F= 30GHz

1.3 1.7

Vds=2V F= 40GHz

1.5 1.9 dB

Ids=Idss/3 F= 12GHz 13 14

dB

Ga

Associated Gain

F= 30GHz

9 10

F= 40GHz

8 9.5

dB

Absolute Maximum Ratings (1)

Tamb = +25°C

Symbol

Parameter

Values

Units

Vds Drain to source voltage

3.5

V

Vgs Gate to source voltage

-2.5

V

Pt

Total power dissipation

280

mW

Tch Operating channel temperature

+175

°C

Tstg Storage temperature range

-55 to +175

°C

(1) Operation of this device above any one of these parameters may cause permanent damage

Ref. : DSEC26120077 -17-Marc-00

2/8

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Share Link: