EC2612 View Datasheet(PDF) - United Monolithic Semiconductors

Part Name

Description

MFG CO.

EC2612

40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor

United Monolithic Semiconductors 

1 2 3 4 5 6 7 8

EC2612

40GHz Super Low Noise PHEMT

1,60

1,40

1,20

1,00

0,80

0,60

0,40

0,20

5

NF and Associated Gain vs F (Ids=Idss/3)

26

23

20

17

14

11

8

5

10

15

20

25

30

35

40

Frequency (GHz)

Vds=2V

F=12GHz

16,00

50,

15,00

40,

14,00

30,

13,00

20,

12,00

11,00

10,

10,00

0,

0,0

2,0

4,0

6,0

8,0

10,0

12,0

14,0

16,0

18,0

Pout (dBm)

Vds = 3V, Ids = 31mA

Ref. : DSEC26120077 -17-Marc-00

6/8

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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