EDS5116ABTA-6B View Datasheet(PDF) - Elpida Memory, Inc
Part Name
Description
MFG CO.
'EDS5116ABTA-6B' PDF : 52 Pages View PDF
EDS5104ABTA, EDS5108ABTA, EDS5116ABTA
Read/Burst Write Cycle
CLK
CKE
/CS
/RAS
/CAS
/WE
BS
Address
DQM
DQ (input)
DQ (output)
CKE
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
R:a
Bank 0
Active
VIH
C:a
R:b
Bank 0
Read
a
Bank 3
Active
a+1 a+2 a+3
Clock
suspend
C:a'
a a+1 a+2 a+3
Bank 0
Write
Bank 0
Precharge
Bank 3
Precharge
/CS
/RAS
/CAS
/WE
BS
Address
DQM
DQ (input)
DQ (output)
R:a
Bank 0
Active
C:a
R:b
Bank 0
Read
a a+1
Bank 3
Active
C:a
a+3
a a+1 a+2 a+3
Bank 0
Write
Bank 0
Precharge
Read/Burst write
/RAS-/CAS delay = 3
/CAS latency = 3
Burst length = 4
= VIH or VIL
Auto Refresh Cycle
CLK
CKE
/CS
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
VIH
/RAS
/CAS
/WE
BS
Address
DQM
DQ (input)
DQ (output)
A10=1
Precharge
If needed
t RP
Auto Refresh
t RC
High-Z
Auto Refresh
t RC
R:a
C:a
Active
Bank 0
a a+1
Read
Bank 0
Refresh cycle and
Read cycle
/RAS-/CAS delay = 2
/CAS latency = 2
Burst length = 4
= VIH or VIL
Preliminary Data Sheet E0250E10 (Ver. 1.0)
46
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