EMIF02-1003M6 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'EMIF02-1003M6' PDF : 10 Pages View PDF
Characteristics
1
Characteristics
EMIF02-1003M6
Table 1.
Symbol
Absolute ratings (limiting values at Tamb = 25 °C unless otherwise specified)
Parameter
Value
Unit
VPP
ESD discharge IEC61000-4-2 air discharge on input and output pins
ESD discharge IEC61000-4-2 contact discharge on input and output pins
15
8
kV
Tj
Junction temperature
Top Operating temperature range
Tstg Storage temperature range
125
°C
-40 to + 85
°C
-55 to +150
°C
Table 2.
Symbol
Electrical characteristics (Tamb = 25 °C)
Parameter
VBR
IRM
VRM
VCL
Rd
IPP
RI/O
Cline
Breakdown voltage
Leakage current @ VRM
Stand-off voltage
Clamping voltage
Dynamic resistance
Peak pulse current
Series resistance between Input & Output
Input capacitance per line
Symbol
Test conditions
VBR
IRM
RI/O
Cline
S21
IR = 1 mA
VRM = 3 V per line
Tolerance ± 10%
VR= 0 VDC, VOSC = 30 mV, F = 1 MHz
F = 900 MHz
I
IF
VBR
VCL
VRM
VF
IRM
IR
Min.
5
IPP
Typ.
6.5
100
30
Max.
8
100
39
-26
V
Unit
V
nA
Ω
pF
dB
2/10
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