EN29LV160JB-70TIP View Datasheet(PDF) - Eon Silicon Solution Inc.
Part Name
Description
MFG CO.
EN29LV160JB-70TIP
Eon Silicon Solution Inc.
'EN29LV160JB-70TIP' PDF : 44 Pages View PDF
EN29LV160J
Table 7. DC Characteristics
(Ta = 0°C to 70°C or - 40°C to 85°C; VCC = 2.7-3.6V)
Symbol
Parameter
Test Conditions
Min
Typ Max Unit
ILI
ILO
ICC1
Input Leakage Current
Output Leakage Current
Supply Current (read) TTL
(read) CMOS Byte
(read) CMOS Word
0V≤ VIN ≤ Vcc
0V≤ VOUT ≤ Vcc
CE# = VIL; OE# = VIH;
f = 5MHz
±5
µA
±5
µA
8
16
mA
6
18
mA
7
20
mA
ICC2
ICC3
Supply Current (Standby - TTL)
(Standby - CMOS)
Supply Current (Program or Erase)
CE# = VIH,
BYTE# = RESET# =
Vcc ± 0.3V
(Note 1)
CE# = BYTE# =
RESET# = Vcc ± 0.3V
(Note 1)
Byte program, Sector or
Chip Erase in progress
0.4
1.0
mA
1
5.0
µA
25
50
mA
VIL
VIH
VOL
VOH
VID
IID
VLKO
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage TTL
Output High Voltage CMOS
A9 Voltage (Electronic Signature)
A9 Current (Electronic Signature)
Supply voltage (Erase and
Program lock-out)
IOL = 4.0 mA
IOH = -2.0 mA
IOH = -100 µA,
A9 = VID
-0.5
0.7 x
Vcc
0.85 x
Vcc
Vcc -
0.4V
10.5
2.3
0.8
V
Vcc ±
0.3
V
0.45
V
V
V
11.5
V
100
µA
2.5
V
Notes
1. BYTE# pin can also be GND ± 0.3V. BYTE# and RESET# pin input buffers are always enabled so that
they draw power if not at full CMOS supply voltages.
4800 Great America Parkway, Suite 202
26
Santa Clara, CA 95054
Rev 0.3 Release Date: 2002/01/30
Tel: 408-235-8680
Fax: 408-235-8685
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