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ESDALC6V1W5 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
MFG CO.
ESDALC6V1W5
ST-Microelectronics
STMicroelectronics ST-Microelectronics
'ESDALC6V1W5' PDF : 7 Pages View PDF
1 2 3 4 5 6 7
1 Characteristics
1 Characteristics
ESDALC6V1W5
Table 1.
Symbol
Absolute Ratings (Tamb = 25°C)
Parameter
Value Unit
PPP Peak pulse power (8/20 µs)
25
W
Tj Junction temperature
150
°C
Tstg Storage temperature range
-55 to +150 °C
TL Maximum lead temperature for soldering during 10s
260
°C
Top Operating temperature range(1)
-40 to +150 °C
1. The values of the operating parameters versus temperature are given through curves and αT parameter.
1.1 Electrical Characteristics (Tamb = 25°C)
Symbol
Parameter
VRM Stand-off voltage
VBR Breakdown voltage
I
IF
VCL Clamping voltage
IRM Leakage current
VF
IPP Peak pulse current
VCL VBR VRM
IR Reverse leakage current
IRM
V
IF Forward current
αT Voltage temperature coefficient
VF Forward voltage drop
C Capacitance
Slope: 1/Rd
IPP
Rd Dynamic resistance
Part Numbers
VBR@ IR
min. max.
V
V
mA
ESDALC6V1W5
6.1
7.2
1
1. Square pulse lpp = 15 A, tp = 2.5 µs
2. VBR = aT* (Tamb - 25 °C) * VBR (25 °C)
IRM @ VRM
max.
µA
V
1
3
Rd
typ.(1)
1.1
αT
max.(2)
10-4/°C
6
C
typ.
3V bias
pF
7.5
2/7
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