ADG884
VDD = 3.4 V to 4.2 V; GND = 0 V, unless otherwise noted.1
Table 3.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance, RON
On Resistance Match Between
Channels, ∆RON
On Resistance Flatness, RFLAT (ON)
LEAKAGE CURRENTS
Source Off Leakage, IS (OFF)
Channel On Leakage, ID, IS (ON)
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current, IINL or IINH
Digital Input Capacitance, CIN
DYNAMIC CHARACTERISTICS2
tON
tOFF
Break-Before-Make Time Delay, tBBM
Charge Injection
Off Isolation
25°C
0.33
0.38
0.013
0.042
0.13
0.155
±0.2
±0.2
0.005
2
42
50
15
21
17
100
−60
−40°C to +85°C
0 V to VDD
0.45
0.065
0.175
2.0
0.8
±0.1
54
24
10
Channel-to-Channel Crosstalk
−120
−60
Total Harmonic Distortion, THD + N 0.01
Insertion Loss
−3 dB Bandwidth
CS (OFF)
CD, CS (ON)
POWER REQUIREMENTS
IDD
−0.03
18
110
300
0.003
1
1 Temperature range of the B version is −40°C to +85°C.
2 Guaranteed by design, not subject to production test.
Unit
Test Conditions/Comments
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA typ
VDD = 3.4 V, VS = 0 V to VDD, IS = 100 mA
See Figure 18
VDD = 3.4 V, VS = 2 V, IS = 100 mA
VDD = 3.4 V, VS = 0 V to VDD
IS = 100 mA
VDD = 4.2 V
VS = 0.6 V/3.9 V, VD = 3.9 V/0.6 V; see Figure 19
VS = VD = 0.6 V or 3.9 V; see Figure 20
V min
V max
μA typ
μA max
pF typ
VIN = VINL or VINH
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
dB typ
%
dB typ
MHz typ
pF typ
pF typ
μA typ
μA max
RL = 50 Ω, CL = 35 pF
VS = 1.5 V/0 V; see Figure 21
RL = 50 Ω, CL = 35 pF
VS = 1.5 V; see Figure 21
RL = 50 Ω, CL = 35 pF
VS1 = VS2 = 1.5 V; see Figure 22
VS = 1.5 V, RS = 0 Ω, CL = 1 nF; see Figure 23
RL = 50 Ω, CL = 5 pF, f = 100 kHz;
see Figure 24
S1A−S2A/S1B−S2B, RL = 50 Ω, CL = 5 pF,
f = 100 kHz; see Figure 27
S1A−S1B/S2A−S2B, RL = 50 Ω, CL = 5 pF,
f = 100 kHz; see Figure 25
RL = 32 Ω, f = 20 Hz to 20 kHz,
VS = 2 V p-p
RL = 50 Ω, CL = 5 pF; see Figure 26
RL = 50 Ω, CL = 5 pF; see Figure 26
VDD = 4.2 V
Digital inputs = 0 V or 4.2 V
Rev. A | Page 4 of 16