FDB6670AS View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

MFG CO.

FDB6670AS

30V N-Channel PowerTrench® SyncFET™

Fairchild Semiconductor 

1 2 3 4 5 6

Electrical Characteristics

Symbol

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

∆BVDSS

∆TJ

IDSS

Drain–Source Breakdown Voltage

Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current

IGSS

Gate–Body Leakage

On Characteristics (Note 2)

VGS(th)

Gate Threshold Voltage

∆VGS(th)

∆TJ

RDS(on)

Gate Threshold Voltage

Temperature Coefficient

Static Drain–Source

On–Resistance

ID(on)

On–State Drain Current

gFS

Forward Transconductance

Dynamic Characteristics

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

RG

Gate Resistance

Switching Characteristics (Note 2)

td(on)

Turn–On Delay Time

tr

Turn–On Rise Time

td(off)

Turn–Off Delay Time

tf

Turn–Off Fall Time

td(on)

Turn–On Delay Time

tr

Turn–On Rise Time

td(off)

Turn–Off Delay Time

tf

Turn–Off Fall Time

Qg

Total Gate Charge, Vgs=10V

Qgs

Gate–Source Charge, Vgs=5V

Qgd

Gate–Drain Charge

Qgd

Gate–Drain Charge

Drain–Source Diode Characteristics

VSD

Drain–Source Diode Forward

Voltage

trr

Diode Reverse Recovery Time

Qrr

Diode Reverse Recovery Charge

VGS = 0 V, ID = 1mA

ID = 26mA, Referenced to 25°C

VDS = 24 V, VGS = 0 V

VGS = ±20 V, VDS = 0 V

VDS = VGS, ID = 1mA

ID = 26mA, Referenced to 25°C

VGS = 10 V, ID = 31 A

VGS = 4.5 V, ID = 26.5 A

VGS=10 V, ID =31 A, TJ=125°C

VGS = 10 V, VDS = 10 V

VDS = 10 V, ID = 31 A

VDS = 15 V, V GS = 0 V,

f = 1.0 MHz

VGS = 15 mV, f = 1.0 MHz

VDS = 15 V, ID = 1 A,

VGS = 10 V, RGEN = 6 Ω

VDS = 15 V, ID = 1 A,

VGS = 4.5 V, RGEN = 6 Ω

VDS = 15 V, ID = 31 A,

VGS = 0 V, IS = 3.5 A

VGS = 0 V, IS = 7 A

IF = 3.5 A,

diF/dt = 300 A/µs

(Note 1)

(Note 1)

(Note 2)

30

V

30

mV/°C

500 µA

±100 nA

1

1.7

3

V

–3.4

mV/°C

6.8 8.5 mΩ

8.4 10.5

9 12.5

60

A

84

S

1570

pF

440

pF

160

pF

1.9

Ω

9

18

ns

12 22

ns

27 43

ns

19 34

ns

16 29

ns

16 29

ns

25 40

ns

13 23

ns

28 39

nC

15 21

nC

5

nC

5

nC

0.5 0.7

V

0.6 0.9

20

nS

14

nC

Notes:

1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

2. See “SyncFET Schottky body diode characteristics” below.

3. FDB6670AS_NL is a lead free product. The FDB6670AS_NL marking will appear on the reel label.

4. FDP6670AS_NL is a lead free product. The FDP6670AS_NL marking will appear on the reel label.

FDP6670AS/FDB6670AS Rev A (X)

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