FDB6670AS View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
MFG CO.
'FDB6670AS' PDF : 6 Pages View PDF
Typical Characteristics (continued)
10
ID = 31A
8
VDS = 10V
20V
6
15V
4
2
0
0
6
12
18
24
30
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
1000
100
RDS(ON) LIMIT
100µs
10ms
100m
1s
10s
10
VGS = 10V
DC
SINGLE PULSE
RθJC = 2.1oC/W
TA = 25oC
1
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
2400
1800
1200
f = 1MHz
VGS = 0 V
Ciss
Coss
600
Crss
0
0
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
1000
800
600
SINGLE PULSE
RθJC = 2.1°C/W
TA = 25°C
400
200
0
0.1
1
10
100
t1, TIME (sec)
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
RθJC(t) = r(t) * RθJC
RθJC = 2.1 °C/W
P(pk
t1
t2
TJ - Tc = P * RθJC(t)
Duty Cycle, D = t1 / t2
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDP6670AS/FDB6670AS Rev A (X)
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