FQP70N10 View Datasheet(PDF) - Thinki Semiconductor Co., Ltd.
Part Name
Description
MFG CO.
'FQP70N10' PDF : 7 Pages View PDF
FQP70N10
Pb Free Plating Product
FQP70N10
Pb
57A,100V Heatsink Planar N-Channel Power MOSFET
Features
• 57A, 100V, RDS(on) = 0.023Ω @VGS = 10 V
• Low gate charge ( typical 85 nC)
• Low Crss ( typical 150 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
1. Gate {
{ 2. Drain
●
◀▲
●
●
{ 3. Source
General Description
This N-channel enhancement mode field-effect power transistor
using THINKI Semiconductor advanced planar stripe, DMOS technol-
ogy intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged
avalanche characteristics. The TO-220C pkg is well suited for
adaptor power units,amplifiers,inverters and SMPS application.
BVDSS = 100V
RDS(ON) = 0.023 ohm
ID = 57A
TO-220C
G DS
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
FQP70N10
100
57
40.3
228
± 25
1300
57
16
6.0
160
1.06
-55 to +175
300
Typ
Max
--
0.94
0.5
--
--
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
Rev.09T
© 1995 Thinki Semiconductor Co., Ltd.
Page 1/7
http://www.thinkisemi.com.tw/
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