FQP7N80C View Datasheet(PDF) - Thinki Semiconductor Co., Ltd.
Part Name
Description
MFG CO.
'FQP7N80C' PDF : 8 Pages View PDF
FQP7N80C
Typical Characteristics
V
GS
Top : 15.0 V
101
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
10-1
10-2
10-1
※ Notes :
1. 250μ s Pulse Test
2. T = 25℃
C
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
4.0
3.5
3.0
VGS = 10V
2.5
V = 20V
GS
2.0
1.5
※ Note : T = 25℃
J
1.0
0
3
6
9
12
15
18
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
2000
1500
C = C + C (C = shorted)
iss gs gd ds
C =C +C
oss ds gd
C =C
rss gd
C
iss
1000
500
0
10-1
Coss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
C
rss
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
150oC
25oC
100
-55oC
10-1
2
※ Notes :
1.
2.
V25DS0μ=s50PVulse
Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃
25℃
※ Notes :
1. V = 0V
2. 25GS0μ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
V , Source-Drain voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V = 160V
DS
10
V = 400V
DS
V = 640V
DS
8
6
4
2
※ Note : ID = 6.6A
0
0
5
10
15
20
25
30
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev.09T
© 1995 Thinki Semiconductor Co., Ltd.
Page 3/8
http://www.thinkisemi.com.tw/
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