FQP7N80C View Datasheet(PDF) - Thinki Semiconductor Co., Ltd.
Part Name
Description
MFG CO.
'FQP7N80C' PDF : 8 Pages View PDF
FQP7N80C
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
※ Notes :
1.
2.
VIDG=S =2500Vμ
A
0.8
-100
-50
0
50
100
150
200
T, Junction Temperature [oC]
J
Figure 7. Breakdown Voltage Variation
vs Temperature
102
Operation in This Area
is Limited by R
DS(on)
10 µs
100 µs
101
1 ms
10 ms
DC
100
10-1
10-2
100
※ Notes :
1. T = 25 oC
C
2. T = 150 oC
J
3. Single Pulse
101
102
103
VDS, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area
for FQP7N80C
8
6
4
2
0
25
50
75
100
125
150
T , Case Temperature [℃]
C
Figure 10. Maximum Drain Current
vs Case Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. VGS = 10 V
2. ID = 3.3 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
102
Operation in This Area
is Limited by R
DS(on)
10 µs
101
100 µs
1 ms
10 ms
100
DC
10-1
10-2
100
※ Notes :
1. T = 25 oC
C
2. T = 150 oC
J
3. Single Pulse
101
102
103
VDS, Drain-Source Voltage [V]
Figure 9-2. Maximum Safe Operating Area
for FQPF7N80C
Rev.09T
© 1995 Thinki Semiconductor Co., Ltd.
Page 4/8
http://www.thinkisemi.com.tw/
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