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HMT325S6CFR8C View Datasheet(PDF) - Hynix Semiconductor

Part Name
Description
MFG CO.
HMT325S6CFR8C
Hynix
Hynix Semiconductor Hynix
'HMT325S6CFR8C' PDF : 48 Pages View PDF
Standard Speed Bins
DDR3 SDRAM Standard Speed Bins include tCK, tRCD, tRP, tRAS and tRC for each corresponding bin.
DDR3-800 Speed Bins
For specific Notes See "Speed Bin Table Notes" on page 33.
Speed Bin
DDR3-800E
CL - nRCD - nRP
Parameter
Internal read command to first data
Symbol
tAA
6-6-6
min
max
15
20
ACT to internal read or write delay time
tRCD
15
PRE command period
tRP
15
ACT to ACT or REF command period
tRC
52.5
ACT to PRE command period
CL = 5
CL = 6
CWL = 5
CWL = 5
Supported CL Settings
Supported CWL Settings
tRAS
tCK(AVG)
tCK(AVG)
37.5
9 * tREFI
3.0
3.3
2.5
3.3
5, 6
5
Unit
Notes
ns
ns
ns
ns
ns
ns 1, 2, 3, 4, 10
ns
1, 2, 3
nCK
10
nCK
Rev. 1.0/Sep. 2012
29
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