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HMT325S6CFR8C View Datasheet(PDF) - Hynix Semiconductor

Part Name
Description
MFG CO.
HMT325S6CFR8C
Hynix
Hynix Semiconductor Hynix
'HMT325S6CFR8C' PDF : 48 Pages View PDF
DDR3-1066 Speed Bins
For specific Notes See "Speed Bin Table Notes" on page 33.
Speed Bin
DDR3-1066F
CL - nRCD - nRP
Parameter
Symbol
Internal read command to
first data
tAA
min
13.125
7-7-7
max
20
ACT to internal read or
write delay time
tRCD
13.125
PRE command period
tRP
13.125
ACT to ACT or REF
command period
tRC
ACT to PRE command
period
tRAS
CL = 5
CWL = 5
CWL = 6
tCK(AVG)
tCK(AVG)
CL = 6
CWL = 5
CWL = 6
tCK(AVG)
tCK(AVG)
CL = 7
CWL = 5
CWL = 6
tCK(AVG)
tCK(AVG)
CL = 8
CWL = 5
CWL = 6
tCK(AVG)
tCK(AVG)
Supported CL Settings
Supported CWL Settings
50.625
37.5
3.0
2.5
1.875
1.875
9 * tREFI
Reserved
Reserved
Reserved
Reserved
5, 6, 7, 8
5, 6
3.3
3.3
< 2.5
< 2.5
Unit
Note
ns
ns
ns
ns
ns
ns
1, 2, 3, 4, 6, 10
ns
4
ns
1, 2, 3, 6
ns
1, 2, 3, 4
ns
4
ns
1, 2, 3, 4
ns
4
ns
1, 2, 3
nCK
10
nCK
Rev. 1.0/Sep. 2012
30
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