HT9200B View Datasheet(PDF) - Holtek Semiconductor
Part Name
Description
MFG CO.
'HT9200B' PDF : 13 Pages View PDF
Approximate Internal Connection Circuits
C M O S IN
P u ll- h ig h
V DD
CM OS OUT
V DD
C M O S IN (F o r D 0 ~ D 3 ,
C LK ,D A TA )
V DD
HT9200A/HT9200B
C M O S IN
O S C IL L A T O R
X1
X2
20pF
10M
10pF
EN
Absolute Maximum Ratings
Supply Voltage ..............................VSS-0.3V to VSS+6V
Input Voltage ................................VSS-0.3 to VDD+0.3V
Storage Temperature ............................-50°C to 125°C
Operating Temperature...........................-20°C to 75°C
Note: These are stress ratings only. Stresses exceeding the range specified under ²Absolute Maximum Ratings² may
cause substantial damage to the device. Functional operation of this device at other conditions beyond those
listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliabil-
ity.
Electrical Characteristics
Symbol
Parameter
VDD
Operating Voltage
IDD
Operating Current
VIL
²Low² Input Voltage
VIH
²High² Input Voltage
ISTB
Standby Current
RP
tDE
VTDC
ITOL
VTAC
ACR
RL
Pull-high Resistance
DTMF Output Delay Time
(Parallel Mode)
DTMF Output DC Level
DTMF Sink Current
DTMF Output AC Level
Column Pre-emphasis
DTMF Output Load
Ta=25°C
Test Conditions
VDD
Conditions
¾
¾
Min. Typ. Max. Unit
2.5
¾
5.5
V
2.5V S/P=VDD,D0~D3=VSS,
5.0V CE=VSS, No load
¾
240 2500
mA
¾
950 3000
¾
¾
VSS
¾ 0.2VDD V
¾
¾
0.8VDD ¾
VDD
V
2.5V
¾
¾
1
S/P=VDD,CE=VDD, no load
mA
5.0V
¾
¾
2
2.5V
VOL=0V
5.0V
120 180 270
kW
45
68
100
5V
¾
¾
tUP+6 tUP+8 ms
2.5V~
5.5V
DTMF Output
2.5V VDTMF=0.5V
2.5V Row group, RL=5kW
2.5V Row group=0dB
2.5V tHD £-23dB
0.45VDD ¾ 0.75VDD V
-0.1
¾
¾
mA
0.12 0.15 0.18 Vrms
1
2
3
dB
5
¾
¾
kW
Rev. 1.40
3
August 30, 2004
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