HWL23NPB View Datasheet(PDF) - Hexawave, Inc
Part Name
Description
MFG CO.
'HWL23NPB' PDF : 7 Pages View PDF
Features
• Plastic Packaged GaAs Power FET
• Suitable for Commercial Wireless
Applications
• High Efficiency
• 3V to 6V Operation
Description
The HWL23NPB is a medium Power GaAs FET
using surface mount type plastic package for
various L-Band applications. It is suitable for
various 900 MHz, 1900 MHz cellular/wireless
applications.
HWL23NPB
L-Band GaAS Power FET
Autumn 2002 V1
Outline Dimensions
1
2
3
Pin 1: Source
Pin 2: Gate
Pin 3: Drain
Absolute Maximum Ratings
VDS Drain to Source Voltage
+7V
VGS Gate to Source Voltage
-5V
ID Drain Current
IDSS
IG Gate Current
1mA
TCH Channel Temperature
150°C
TSTG Storage Temperature
-65 to +150°C
PT Power Dissipation
0.7 Watt
PB Package (SOT-23)
Electrical Specifications (TA=25°C) f=1900 MHz for all RF Tests
Symbol
Parameters & Conditions
Units
Min.
IDSS
Saturated Current at VDS=5V, VGS=0V
mA
90
VP
Pinch-off Voltage at VDS=5V, ID=5.5mA
V
-3.5
gm
Transconductance at VDS=5V, ID=55mA
mS
-
Rth
Thermal Resistance
°C/W
-
P1dB
G1dB
Power Output at Test Points
VDS=3V, ID=0.5IDSS
VDS=5V, ID=0.5IDSS
Gain at 1dB Compression Point
VDS=3V, ID=0.5IDSS
VDS=5V, ID=0.5IDSS
dBm
16.5
19.5
dB
PAE
Power-Added Efficiency (POUT = P1dB)
VDS=3V, ID=0.5IDSS
VDS=5V, ID=0.5IDSS
%
-
-
Typ.
110
-2.0
60
200
17.5
21.0
13.0
14.0
35.0
45.0
Max.
-
-1.5
-
-
-
-
-
-
-
-
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.
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