INA-01100 Absolute Maximum Ratings
Parameter
Absolute Maximum[1]
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
50 mA
400 mW
+13 dBm
200°C
–65 to 200°C
Thermal Resistance:
θjc = 60°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TMounting Surface (TMS) = 25°C.
3. Derate at 16.7 mW/°C for TMS >
176°C.
INA-01100 Electrical Specifications[1,3], TA = 25°C
Symbol
Parameters and Test Conditions[2]: Id = 35 mA, ZO = 50 Ω
GP
Power Gain (|S21| 2)
f = 100 MHz
∆GP
Gain Flatness
f = 10 to 250 MHz
f3 dB
ISO
3 dB Bandwidth
Reverse Isolation (|S12| 2)
f = 10 to 250 MHz
VSWR
Input VSWR
Output VSWR
f = 10 to 250 MHz
f = 10 to 250 MHz
NF
50 Ω Noise Figure
f = 100 MHz
P1 dB Output Power at 1 dB Gain Compression
f = 100 MHz
IP3
Third Order Intercept Point
f = 100 MHz
tD
Group Delay
f = 100 MHz
Vd
Device Voltage
dV/dT Device Voltage Temperature Coefficient
Units Min.
dB
dB
MHz
dB
dB
dBm
dBm
psec
V
4.0
mV/°C
Typ. Max.
32.5
± 0.5
500
39
1.6:1
1.5:1
1.7
11
23
200
5.5 7.0
+10
Notes:
1. The recommended operating current range for this device is 30 to 40 mA. Typical performance as a function of current
is on the following page.
2. RF performance of the chip is determined by packaging and testing 10 devices per wafer.
3. The values are the achievable performance for the INA-01100 mounted in a 70 mil stripline package.
INA-01100
Typical
Scattering
Parameters[1]
(Z
O
=
50
Ω,
T
A
=
25°C,
V
CC
=
35
mA)
Freq.
S11
S21
S12
S22
GHz
Mag
Ang
dB Mag Ang
dB Mag Ang
Mag Ang
k
0.01
0.09 –16 32.7 43.4 –1 –38.5 .012 –1
.18
1 1.17
0.05
0.10 –27 32.7 43.1 –10 –38.6 .012 15
.19
5 1.18
0.10
0.11
–5 32.4 41.9 –20 –38.4 .012 –8
.20
10 1.17
0.20
0.14 –80 31.6 38.0 –37 –38.6 .012 4
.24
14 1.22
0.30
0.18 –98 30.5 33.7 –52 –38.8 .011 –10
.27
15 1.31
0.40
0.20 –110 29.4 29.6 –65 –39.6 .011 2
.30
10 1.51
0.50
0.22 –115 28.4 26.2 –75 –38.6 .012 –12
.32
6 1.48
0.60
0.24 –120 27.4 23.4 –84 –39.1 .011 –7
.34
1 1.67
0.80
0.27 –124 25.7 19.3 –100 –38.3 .012 –6
.36 –11 1.76
1.00
0.30 –127 24.3 16.3 –115 –36.1 .016 –5
.36 –22 1.58
1.5
0.44 165 21.8 12.37 –179 –33.6 .020 42
.19 –69 1.75
2.0
0.44 154 17.9 7.88 146 –33.0 .022 42
.13 –106 2.42
2.5
0.46 148 14.6 5.36 121 –30.6 .029 36
.12 –151 2.63
3.0
0.48 139 11.4 3.71 96 –30.0 .032 45
.10 159 3.31
Note:
1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE
MODELS section of the Communications Components Designer’s Catalog.
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