INA-01100 View Datasheet(PDF) - HP => Agilent Technologies
Part Name
Description
MFG CO.
'INA-01100' PDF : 3 Pages View PDF
INA-01100
Typical
Performance,
T
A
=
25°C
(unless otherwise noted: The values are the achievable performance for the INA-01100 mounted in a 70 mil
stripline package.)
35
Gain Flat to DC
30
3.0
50
TMS = +125°C
40 TMS = +25°C
2.5
TMS = –55°C
35
0.1 GHz
0.5 GHz
30
30
25
2.0
20
1.0 GHz
25
20
1.5
20
10
15
.01 .02
.05 0.1 0.2
1.0
0.5 1.0
FREQUENCY (GHz)
Figure 1. Typical Gain and Noise Figure
vs. Frequency, TA = 25°C, Id = 35 mA
0
0
2
4
6
8
Vd (V)
Figure 2. Device Current vs. Voltage.
15
.01
.05
0.2
1.0
Id (mA)
Figure 3. Power Gain vs. Current.
33
32
Gp
31
30
13
P1 dB
11
2.5
9
2.0
7
1.5
NF
1.0
0.5
–55 –25
+25
+85
+125
TEMPERATURE (°C)
Figure 4. Output Power and 1 dB Gain
Compression, NF and Power Gain vs.
CaseTemperature. f = 0.1 GHz, Id = 35 mA.
15
Id = 40 mA
12
Id = 35 mA
9
Id = 30 mA
6
3
0
.02
.05 0.1 0.2
0.5
1.0
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
INA-01100 Chip Dimensions
3.0
2.5
2.0
Id = 30 to 40 mA
1.5
1.0
.02
.05 0.1 0.2
0.5
1.0
FREQUENCY (GHz)
Figure 6. Noise Figure vs. Frequency.
RF
OUT
GND
(3)
2
(4)
500 ± 13 µm
19.7 ± 0.5 mil
(2)
GND
(1)
1
RF
IN
375 ± 13 µm
14.8 ± 0.5 mil
Chip thickness is 140 µm/5.5 mil. Bond Pads are
41 µm/1.6 mil typical on each side. Note: Ground
Bonding is Critical. Refer to Application Bulletin,
“AB-0007: INA Bonding Configuration”.
6-86
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