INA-03100 View Datasheet(PDF) - HP => Agilent Technologies
Part Name
Description
MFG CO.
'INA-03100' PDF : 3 Pages View PDF
INA-03100 Absolute Maximum Ratings
Parameter
Absolute Maximum[1]
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
50 mA
200 mW
+13 dBm
200°C
–65 to 200°C
Thermal Resistance[2]:
θjc = 70°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TMounting Surface (TMS) = 25°C.
3. Derate at 14.3 mW/°C for TMS >
186°C.
INA-03100 Electrical Specifications[1,3], TA = 25°C
Symbol
Parameters and Test Conditions[2]: Id = 12 mA, ZO = 50 Ω
GP
Power Gain (|S21| 2)
f = 1.5 GHz
∆GP
Gain Flatness
f = 0.01 to 2.0 GHz
f3 dB
ISO
3 dB Bandwidth
Reverse Isolation (|S12| 2)
f = 0.01 to 2.0 GHz
VSWR
Input VSWR
Output VSWR
f = 0.01 to 2.0 GHz
f = 0.01 to 2.0 GHz
NF
50 Ω Noise Figure
f = 1.5 GHz
P1 dB Output Power at 1 dB Gain Compression
f = 1.5 GHz
IP3
Third Order Intercept Point
f = 1.5 GHz
tD
Group Delay
f = 1.5 GHz
Vd
Device Voltage
f = 1.5 GHz
dV/dT Device Voltage Temperature Coefficient
Units Min.
dB
dB
GHz
dB
dB
dBm
dBm
psec
V
3.5
mV/°C
Typ. Max.
26.0
± 0.5
2.8
37
2.05
3.05
2.5
1.0
10
200
4.5 5.5
+5
Notes:
1. The recommended operating current range for this device is 8 to 20 mA. Typical performance as a function of current is
on the following page.
2. RF performance of the chip is determined by packaging and testing 10 devices per wafer.
3. The values are the achievable performance for the INA-03100 mounted in a 70 mil stripline package.
INA-03100
Typical
Scattering
Parameters[1]
(Z
O
=
50
Ω,
T
A
=
25°C,
I
d
=
12
mA)
Freq.
S11
S21
S12
S22
GHz
Mag
Ang
dB Mag Ang
dB Mag Ang
Mag Ang
k
0.05
0.35 176 26.6 21.4 –4 –36.0 .016 8
.56
–1 1.25
0.10
0.35 172 26.6 21.3 –8 –36.5 .015 –4
.56
–3 1.30
0.20
0.33 165 26.4 21.0 –15 –36.4 .015 –5
.56
–4 1.30
0.40
0.31 150 26.1 20.1 –29 –36.0 .016 –13
.54
–7 1.33
0.60
0.27 137 25.6 19.0 –42 –37.6 .013 –14
.54
–8 1.58
0.80
0.23 125 25.0 17.8 –53 –36.1 .016 –13
.53
–9 1.49
1.00
0.19 113 24.5 16.7 –63 –35.1 .018 –16
.53 –10 1.43
1.20
0.16
99 24.0 15.9 –72 –36.9 .014 –21
.54 –12 1.72
1.40
0.13
76 23.8 15.4 –81 –36.4 .015 –12
.55 –15 1.65
1.60
0.12
51 23.6 15.2 –88 –35.6 .017 –11
.56 –17 1.54
1.80
0.13
21 23.6 15.5 –97 –34.1 .020 –5
.58 –20 1.24
2.00
0.18
–5 23.8 15.5 –106 –34.3 .019 –13
.60 –25 1.18
2.50
0.40 –52 24.7 17.2 –132 –30.2 .031 –9
.67 –38 0.53
3.00
0.81 –86 25.6 19.1 –167 –27.0 .045 –12
.70 –64 0.03
Note:
1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE
MODELS section of the Avantek Microwave Semiconductors databook.
6-103
Share Link: 
