INA-03100 View Datasheet(PDF) - HP => Agilent Technologies
Part Name
Description
MFG CO.
'INA-03100' PDF : 3 Pages View PDF
INA-03100
Typical
Performance,
T
A
=
25°C
(unless otherwise noted: The values are the achievable performance for the INA-03100 mounted in a 70 mil
stripline package.)
30
Gain Flat to DC
25
20
5.0
25
TMS = +125°C
20 TMS = +25°C
4.0
TMS = –55°C
15
3.0
30
f = 0.1 – 2 GHz
25
f = 3 GHz
20
10
f = 4 GHz
15
2.0
15
5
10
0.1 0.2
0.5 1.0 2.0
1.0
5.0
FREQUENCY (GHz)
Figure 1. Typical Gain and Noise Figure
vs. Frequency, TA = 25°C, Id = 12 mA.
0
0
2
4
6
8
10
Vd (V)
Figure 2. Device Current vs. Voltage.
10
5
10
15
20
25
Id (mA)
Figure 3. Power Gain vs. Current.
27
26
Gp
25
24
4
P1 dB
2
3.5
0
2.0
–2
2.5
NF
1.0
1.5
–55 –25
+25
+85
+125
TEMPERATURE (°C)
Figure 4. Output Power and 1 dB Gain
Compression, NF and Power Gain vs.
CaseTemperature, f = 1.5 GHz, Id = 12 mA.
8
4 Id = 20 mA
Id = 12 mA
0
Id = 8 mA
–4
–8
0.1 0.2
0.5 1.0 2.0
5.0
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
5.0
4.0
3.0 Id = 8 mA
2.0
Id = 12 to 20 mA
1.0
0.1 0.2
0.5 1.0 2.0
5.0
FREQUENCY (GHz)
Figure 6. Noise Figure vs. Frequency.
INA-03100 Chip Dimensions
C
RF
M
OUT
(3)
GND (2)
2
500 ± 13 µm
19.7 ± 0.5 mil
(4)
GND
(1)
1
RF
IN
375 ± 13 µm
14.8 ± 0.5 mil
Chip thickness is 140 µm/5.5 mil. Bond Pads are
41 µm/1.6 mil typical on each side. Note: Ground
Bonding is Critical. Refer to Application Bulletin,
“AB-0007: INA Bonding Configuration”.
6-104
Share Link: 
