IXFK55N50F View Datasheet(PDF) - IXYS CORPORATION

Part Name

Description

MFG CO.

IXFK55N50F

HiPerRF™ Power MOSFETs

IXYS CORPORATION 

1 2 3 4

IXFK 55N50F

IXFX 55N50F

Fig. 7. Gate Charge Characteristic Curve

15

VDS = 250V

ID = 27.5A

10

5

Fig. 8. Capacitance Curves

10000

Ciss

5000

2500

1000

500

f = 1MHz

Coss

Crss

0

0 50 100 150 200 250 300

Gate Charge - nC

Fig. 9. Source Current vs. Source to Drain Voltage

25

250

0

5

10 15 20 25 30

VDS - Volts

20

15

TJ = 125OC

10

TJ = 25OC

5

0

0.2

0.4

0.6

0.8

1.0

VSD - Volts

Fig. 10. Thermal Impedance

1

0.1

Single Pulse

0.01

0.001

10-4

10-3

10-2

10-1

100

101

Pulse Width - Seconds

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,850,072

4,881,106

4,931,844

5,017,508

5,034,796

5,049,961

5,063,307

5,187,117

5,237,481

5,486,715 6,306,728B1

5,381,025

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