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IXGH40N60B2D1 View Datasheet(PDF) - IXYS CORPORATION

Part Name
Description
MFG CO.
IXGH40N60B2D1
IXYS
IXYS CORPORATION IXYS
'IXGH40N60B2D1' PDF : 6 Pages View PDF
1 2 3 4 5 6
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
IC = 30 A; VCE = 10 V,
20
36
S
Pulse test, t 300 µs, duty cycle 2 %
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = 30 A, VGE = 15 V, VCE = 300 V
Inductive load, TJ = 25°C
IC = 30 A, VGE = 15 V
VCE = 400 V, RG = 3.3
Inductive load, TJ = 125°C
IC = 30 A, VGE = 15 V
VCE = 400 V, RG = 3.3
(TO-247)
2560
pF
210
pF
54
pF
100
nC
15
nC
36
nC
18
ns
20
ns
130 200 ns
82 150 ns
0.4 0.8 mJ
18
ns
20
ns
0.3
mJ
240
ns
150
ns
1.10
mJ
0.42 K/W
0.25
K/W
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IF = 30 A, VGE = 0 V, Pulse test
TJ =150°C
1.6 V
t 300 µs, duty cycle d 2 %
2.5 V
IRM
trr
RthJC
IF = 30 A, VGE = 0 V, -diF/dt =100 A/µs, TJ = 100°C
VR = 100 V
TJ = 100°C 100
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V
25
4A
ns
ns
0.9 K/W
Min. Recommended Footprint
IXGH 40N60B2D1
IXGT 40N60B2D1
TO-247 AD Outline
P
e
Dim. Millimeter
Min. Max.
A
4.7 5.3
A1
2.2 2.54
A2
2.2 2.6
b
1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
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