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IXGH40N60B2D1 View Datasheet(PDF) - IXYS CORPORATION

Part Name
Description
MFG CO.
IXGH40N60B2D1
IXYS
IXYS CORPORATION IXYS
'IXGH40N60B2D1' PDF : 6 Pages View PDF
1 2 3 4 5 6
60
A
50
IF 40
30
TVJ=150°C
TVJ=100°C
20
10
TVJ=25°C
1000
nC
800
Qr
600
TVJ= 100°C
VR = 300V
IF= 60A
IF= 30A
IF= 15A
400
200
IXGH 40N60B2D1
IXGT 40N60B2D1
30
A
25
IRM
20
TVVRJ==
100°C
300V
IF= 60A
IF= 30A
IF= 15A
15
10
5
0
0
1
2
3V
VF
Fig. 17. Forward current IF versus VF
2.0
1.5
Kf
1.0
IRM
0.5
Qr
0
100
A/µs 1000
-diF/dt
Fig. 18.
Reverse recovery
versus -diF/dt
charge
Qr
90
ns
trr
80
70
TVVRJ==
100°C
300V
IIIFFF===
60A
30A
15A
0
0 200 400 600 A8/0µ0s 1000
-diF/dt
Fig. 19.
Peak reverse
versus -diF/dt
current
IRM
20 TVJ= 100°C
V IF = 30A
VFR
VFR
15
tfr
1.00
µs
tfr
0.75
10
0.50
5
0.25
0.0
0
40
80 120 °C 160
TVJ
Fig. 20. Dynamic parameters Qr, IRM
versus TVJ
1
K/W
0.1
ZthJC
60
0 200 400 600 A8/0µ0s 1000
-diF/dt
Fig. 21. Recovery time trr versus -diF/dt
0
0.00
0 200 400 600 A80/µ0s 1000
diF/dt
Fig. 22. Peak forward voltage VFR and
tfr versus diF/dt
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1
0.502
2
0.193
3
0.205
0.0052
0.0003
0.0162
0.01
0.001
0.00001
0.0001
0.001
0.01
Fig. 23. Transient thermal resistance junction to case
DSEP 29-06
0.1
s
1
t
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
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