IXKC40N60C View Datasheet(PDF) - IXYS CORPORATION
Part Name
Description
MFG CO.
'IXKC40N60C' PDF : 2 Pages View PDF
1
2
IXKC 40N60C
Symbol
Qg(on)
Qgs
Qgd
td(on)
tr
td(off)
tf
RthJC
RthCH
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 10 V, VDS = 350 V, ID = 40 A
VGS = 10 V, VDS = 380V
ID = 40 A, RG = 1.8 Ω
158
nC
42
nC
92
nC
20
ns
55
ns
60
ns
10
ns
0.5 K/W
0.30
K/W
Reverse Correction
Symbol
Test Conditions
VSD
IF = 20 A, VGS = 0 V
Note 3
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
0.8 1.2 V
Note: 1. MOSFET chip capability
2. Intrinsic diode capability
3. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
ISOPLUS220 OUTLINE
Note: All terminals are solder plated.
1 - Gate
2 - Drain
3 - Source
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
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