IXTH36P10 View Datasheet(PDF) - IXYS CORPORATION

Part Name

Description

MFG CO.

IXTH36P10

Standard Power MOSFET

IXYS CORPORATION 

1 2

IXTH 36P10

Symbol

gfs

Ciss

C

oss

Crss

t

d(on)

tr

t

d(off)

tf

Q

g(on)

Qgs

Q

gd

R

thJC

RthCS

Test Conditions

Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

VDS = -10 V; ID = ID25, pulse test

6 12

S

2800

pF

VGS = 0 V, VDS = -25 V, f = 1 MHz

1100

pF

490

pF

35

ns

VGS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25

37

ns

RG = 4.7 Ω (External)

65

ns

28

ns

95

nC

VGS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25

27

nC

40

nC

0.65 K/W

0.25

K/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

IS

VGS = 0

I

SM

Repetitive; pulse width limited by TJM

V

SD

IF = IS, VGS = 0 V,

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

trr

IF = IS, di/dt = 100 A/µs, VR = -50 V

-36 A

-144 A

-3 V

180

ns

TO-247 AD Outline

123

Terminals: 1 - Gate

2 - Drain

3 - Source Tab - Drain

Dim. Millimeter

Min. Max.

A

4.7 5.3

A1

2.2 2.54

A2

2.2

2.6

b

1.0 1.4

b1 1.65 2.13

b2 2.87 3.12

C

.4

.8

D 20.80 21.46

E 15.75 16.26

e 5.20 5.72

L 19.81 20.32

L1

4.50

∅P 3.55 3.65

Q 5.89 6.40

R 4.32 5.49

S 6.15 BSC

Inches

Min. Max.

.185 .209

.087 .102

.059 .098

.040 .055

.065 .084

.113 .123

.016 .031

.819 .845

.610 .640

0.205 0.225

.780 .800

.177

.140 .144

0.232 0.252

.170 .216

242 BSC

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,850,072

4,881,106

4,931,844

5,017,508

5,034,796

5,049,961

5,063,307

5,187,117

5,237,481

5,486,715 6,306,728B1

5,381,025

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