IXTN110N20L2 View Datasheet(PDF) - IXYS CORPORATION
Part Name
Description
MFG CO.
'IXTN110N20L2' PDF : 5 Pages View PDF
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
VDS= 10V, ID = 55A, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 55A
RG = 1Ω (External)
Qg(on)
Qgs
Qgd
VGS= 10V, VDS = 0.5 • VDSS, ID = 55A
RthJC
RthCS
Characteristic Values
Min. Typ. Max.
55
75
95 S
23
nF
2160
pF
320
pF
40
ns
100
ns
33
ns
135
ns
500
nC
110
nC
182
nC
0.05
0.17 °C/W
°C/W
IXTN110N20L2
SOT-227B (IXTN) Outline
(M4 screws (4x) supplied)
Safe-Operating-Area Specification
Symbol
SOA
Test Conditions
VDS = 200V, ID = 1.75A, TC = 75°C , Tp = 3s
Characteristic Values
Min. Typ. Max.
350
W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = 55A, VGS = 0V, Note 1
trr
IRM
QRM
IF = 55A, -di/dt = 100A/μs,
VR = 100V, VGS = 0V
Note 1. Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.
Characteristic Values
Min. Typ. Max.
110 A
440 A
1.35 V
420
ns
39
A
8.3
μC
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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