IXTN110N20L2 View Datasheet(PDF) - IXYS CORPORATION
Part Name
Description
MFG CO.
'IXTN110N20L2' PDF : 5 Pages View PDF
IXTN110N20L2
Fig. 7. Input Admittance
160
140
120
100
80
TJ = 125ºC
25ºC
60
- 40ºC
40
20
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
320
280
240
200
160
120
80
TJ = 125ºC
TJ = 25ºC
40
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
VSD - Volts
140
120
100
80
60
40
20
0
0
Fig. 8. Transconductance
TJ = - 40ºC
25ºC
125ºC
20
40
60
80
100
120
140
160
ID - Amperes
16
VDS = 100V
14
I D = 55A
12
I G = 10mA
Fig. 10. Gate Charge
10
8
6
4
2
0
0
100
200
300
400
500
600
700
800
QG - NanoCoulombs
100,000
Fig. 11. Capacitance
f = 1 MHz
Fig. 12. Maximum Transient Thermal Impedance
1.000
10,000
Ciss
0.100
1,000
Coss
0.010
Crss
100
0.001
0
5
10
15
20
25
30
35
40
0.00001
0.0001
0.001
0.01
0.1
1
10
VDS - Volts
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
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