IXTP140P05T View Datasheet(PDF) - IXYS CORPORATION
Part Name
Description
MFG CO.
'IXTP140P05T' PDF : 6 Pages View PDF
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
VDS = -10V, ID = 0.5 • ID25, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = - 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = -10V, VDS = - 30V, ID = - 50A
RG = 1Ω (External)
Qg(on)
Qgs
Qgd
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
RthCS
TO-220
TO-247
IXTA140P05T IXTP140P05T
IXTH140P05T
Characteristic Values
Min. Typ. Max.
TO-247 Outline
44
72
S
13.5
nF
1640
pF
640
pF
28
ns
34
ns
38
ns
25
ns
200
50
65
0.50
0.21
nC
nC
nC
0.42 °C/W
°C/W
°C/W
1 = Gate
2 = Drain
3 = Source
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = - 70A, VGS = 0V, Note 1
trr
QRM
IRM
IF = - 70A, -di/dt = -100A/μs
VR = - 25V, VGS = 0V
Characteristic Values
Min. Typ. Max.
-140 A
- 560 A
-1.3 V
53
ns
58
nC
- 2.2
A
TO-220 Outline
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
TO-263 Outline
Pins: 1 - Gate
3 - Source
2 - Drain
Pins:
1 - Gate
2,4 - Drain
3 - Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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