IXTA140P05T IXTP140P05T
IXTH140P05T
Fig. 7. Input Admittance
-180
-160
-140
-120
TJ = 125ºC
-100
25ºC
- 40ºC
-80
-60
-40
-20
0
-2.5
-3.0
-3.5
-4.0
-4.5
-5.0
-5.5
-6.0
-6.5
VGS - Volts
Fig. 8. Transconductance
100
TJ = - 40ºC
80
25ºC
125ºC
60
40
20
0
0
-20
-40
-60
-80 -100 -120 -140 -160 -180
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-300
-250
-200
-150
-100
TJ = 125ºC
TJ = 25ºC
-50
0
-0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 -1.2 -1.3 -1.4 -1.5
VSD - Volts
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0
VDS = - 25V
I D = - 70A
I G = -1mA
20
40
Fig. 10. Gate Charge
60
80
100 120 140 160 180 200
QG - NanoCoulombs
100,000
f = 1 MHz
10,000
Fig. 11. Capacitance
Ciss
Coss
- 1,000
- 100
Fig. 12. Forward-Bias Safe Operating Area
RDS(on) Limit
External Lead
Current Limit
25µs
100µs
1ms
1,000
- 10
10ms
Crss
100
0
-5
-10
-15
-20
-25
-30
-35
-40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
-1
-1
TJ = 150ºC
TC = 25ºC
Single Pulse
- 10
VDS - Volts
100ms
DC
- 100