J2N2907A View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

J2N2907A

Hi-Rel 60 V - 0.6 A PNP transistor

STMicroelectronics 

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2N2907AHR

Electrical characteristics

Figure 6. Collector emitter saturation Figure 7. Base emitter saturation voltage

voltage

(hFE = 10)

$0Y

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2.4

Test circuits

Figure 8. JANS saturated turn-on switching time test circuit

NOTES:

1. The rise time (tr) of the applied pulse shall be ≤ 2.0 ns, duty cycle ≤ 2 percent and the generator

source impedance shall be 50 ohms.

2. Sampling oscilloscope: Zin ≥ 100 K ohms, Cin ≤ 12 pF, rise time ≤ 5 ns.

DocID15382 Rev 10

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