J2N2907AUB1 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'J2N2907AUB1' PDF : 16 Pages View PDF
2N2907AHR
Hi-Rel 60 V, 0.6 A PNP transistor
1
2
3
TO-18
3
3
1
2
LCC-3
4
1
2
UB
Pin 4 in UB is connected to the metallic lid.
Figure 1. Internal schematic diagram
Features
Datasheet - production data
Parameter
BVCEO
IC (max)
HFE at 10 V - 150 mA
Value
60 V
0.6 A
> 100
• Hermetic packages
• ESCC and JANS qualified
• European preferred part list EPPL
Description
The 2N2907AHR is a silicon planar PNP
transistor specifically designed and housed in
hermetic packages for aerospace and Hi-Rel
applications. It is available in the JAN qualification
system (MIL-PRF19500 compliance) and in the
ESCC qualification system (ESCC 5000
compliance). In case of discrepancies between
this datasheet and the relevant agency
specification, the latter takes precedence.
Table 1. Device summary
Device
Qualification Agency
system specification
Package
Radiation level
JANSR2N2907AUBx
JANSR
MIL-PRF-
19500/291
UB
100 krad - high and low
dose rate
JANS2N2907AUBx
JANS
MIL-PRF-
19500/291
UB
-
2N2907ARUBx
ESCC Flight 5202/001
UB
100 krad - low dose rate
2N2907AUBx
ESCC Flight 5202/001
UB
-
SOC2907ARHRx ESCC Flight 5202/001
LCC-3
100 krad - low dose rate
SOC2907AHRx
ESCC Flight 5202/001
LCC-3
-
2N2907ARHRx
ESCC Flight 5202/001
TO-18
100 krad - low dose rate
2N2907AHRx
ESCC Flight 5202/001
TO-18
-
EPPL
-
-
Target
Target
Yes
Yes
-
-
December 2015
This is information on a product in full production.
DocID15382 Rev 10
1/22
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