K4B2G1646C-HCF8 View Datasheet(PDF) - Samsung
Part Name
Description
MFG CO.
'K4B2G1646C-HCF8' PDF : 64 Pages View PDF
K4B2G1646C
datasheet
Rev. 1.11
DDR3 SDRAM
[ Table 55 ] Derating values DDR3-1866/2133 tIS/tIH-AC/DC based - Alternate AC125 Threshold
∆tIS, ∆tIH Derating [ps] AC/DC based
Alternate AC125 Threshold -> VIH(AC) = VREF(DC) + 125mV, VIL(AC) = VREF(DC) - 125mV
CLK,CLK Differential Slew Rate
4.0 V/ns
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4V/ns
1.2V/ns
∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH
2.0
63
50
63
50
63
50
71
58
79
66
87
74
95
84
1.5
42
34
42
34
42
34
50
42
58
50
66
58
74
68
1.0
0
0
0
0
0
0
8
8
16
16
24
24
32
34
CMD/
ADD 0.9
4
-4
4
-4
4
-4
12
4
20
12
28
20
36
30
Slew 0.8
6
-10
6
-10
6
-10 14
-2
22
6
30
14
38
24
rate 0.7
11
-16
11
-16
11
-16
19
-8
27
0
35
8
43
18
V/ns
0.6 16 -26 16 -26 16 -26 24 -18 32 -10 40
-2
48
8
0.5 15 -40 15 -40 15 -40 23 -32 31 -24 39 -16 47
-6
0.4 13 -60 13 -60 13 -60 21 -52 29 -44 37 -36 45 -26
1.0V/ns
∆tIS ∆tIH
103 100
82
84
40
50
44
46
46
40
51
34
56
24
55
10
53 -10
[ Table 56 ] Required time tVAC above VIH(AC) {blow VIL(AC)} for valid ADD/CMD transition
Slew Rate[V/ns]
>2.0
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
< 0.5
tVAC @175mV [ps]
min
max
75
-
57
-
50
-
38
-
34
-
29
-
22
-
13
-
0
-
0
-
tVAC @150mV [ps]
min
max
175
-
170
-
167
-
163
-
162
-
161
-
159
-
155
-
150
-
150
-
tVAC @135mV [ps]
min
max
TBD
-
TBD
-
TBD
-
TBD
-
TBD
-
TBD
-
TBD
-
TBD
-
TBD
-
TBD
-
tVAC @125mV [ps]
min
max
TBD
-
TBD
-
TBD
-
TBD
-
TBD
-
TBD
-
TBD
-
TBD
-
TBD
-
TBD
-
- 54 -
Share Link: 
