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L6206 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
MFG CO.
L6206
ST-Microelectronics
STMicroelectronics ST-Microelectronics
'L6206' PDF : 23 Pages View PDF
L6206
PARALLELED OPERATION
The outputs of the L6206 can be paralleled to increase the output current capability or reduce the power dissi-
pation in the device at a given current level. It must be noted, however, that the internal wire bond connections
from the die to the power or sense pins of the package must carry current in both of the associated half bridges.
When the two halves of one full bridge (for example OUT1A and OUT2A) are connected in parallel, the peak
current rating is not increased since the total current must still flow through one bond wire on the power supply
or sense pin. In addition the over current detection senses the sum of the current in the upper devices of each
bridge (A or B) so connecting the two halves of one bridge in parallel does not increase the over current detec-
tion threshold.
For most applications the recommended configuration is Half Bridge 1 of Bridge A paralleled with the Half Bridge
1 of the Bridge B, and the same for the Half Bridges 2 as shown in Figure 13. The current in the two devices
connected in parallel will share very well since the RDS(ON) of the devices on the same die is well matched.
When connected in this configuration the over current detection circuit, which senses the current in each bridge
(A and B), will sense the current in upper devices connected in parallel independently and the sense circuit with
the lowest threshold will trip first. With the enables connected in parallel, the first detection of an over current in
either upper DMOS device will turn of both bridges. Assuming that the two DMOS devices share the current
equally, the resulting over current detection threshold will be twice the minimum threshold set by the resistors
RCLA or RCLB in figure 13. It is recommended to use RCLA = RCLB.
In this configuration the resulting Bridge has the following characteristics.
- Equivalent Device: FULL BRIDGE
- RDS(ON) 0.15Typ. Value @ TJ = 25°C
- 5.6A max RMS Load Current
- 11.2A max OCD Threshold
Figure 13. Parallel connection for higher current
+
VS
8-52VDC
C1
POWER
GROUND
-
SIGNAL
GROUND
LOAD
VSA 20
C2
VSB 17
D1
RP
VCP
22
CBOOT
D2
CP
VBOOT
15
SENSEA 3
SENSEB 10
OUT1A 5
OUT2A 21
OUT1B 8
OUT2B 16
18
GND
19
GND
6
GND
7
GND
9 OCDB
ENB
14
4 OCDA
ENA
REN
23
EN
CEN
1 IN1A
IN1
2 IN2A
11 IN1B
12 IN2B
IN2
24 PROGCLA
RCLA
13 PROGCLB
RCLB
D02IN1364
14/23
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