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L6566B View Datasheet(PDF) - STMicroelectronics

Part Name
Description
MFG CO.
L6566B
ST-Microelectronics
STMicroelectronics ST-Microelectronics
'L6566B' PDF : 51 Pages View PDF
L6566B
Electrical characteristics
Table 4. Electrical characteristics (continued)
Symbol
Parameter
Test condition
Zero current detector/ overvoltage protection
VZCDH
VZCDL
VZCDA
VZCDT
Upper clamp voltage
Lower clamp voltage
Arming voltage
Triggering voltage
IZCD Internal pull-up
IZCDsrc
IZCDsnk
TBLANK1
VZCDth
TBLANK2
Source current capability
Sink current capability
Turn-on inhibit time
OVP threshold
OVP strobe delay
Latched shutdown function
IZCD = 3 mA
IZCD = - 3 mA
(1) positive-going edge
(1) negative-going edge
VCOMP < VCOMPSH
VZCD < 2 V, VCOMP = VCOMPHI
VZCD = VZCDL
VZCD = VZCDH
After gate-drive going low
After gate-drive going low
IOTP
VOTP
Input bias current
Disable threshold
Thermal shutdown
VDIS = 0 to VOTP
(1)
Vth Shutdown threshold
Hys Hysteresis
External oscillator (frequency modulation)
fFMOD
---
Oscillation frequency
Usable frequency range
Vpk
Vvy
IFMOD
Peak voltage
Valley voltage
Charge/discharge current
Mode selection / slope compensation
CMOD = 0.1 µF
(3)
MODEth
SCpk
SCvy
Threshold for QR operation
Ramp peak
(MODE/SC = open)
Ramp starting value
(MODE/SC = open)
Ramp voltage
(MODE/SC = open)
Source capability
(MODE/SC = open)
RS-COMP = 3 kto GND, GD
pin high, VCOMP = 5 V
RS-COMP = 3 kto GND,
GD pin high
GD pin low
VS-COMP = VS-COMPpk
Min
5.4
85
30
-130
-3
3
4.85
4.32
600
0.05
0.8
Typ
5.7
-0.4
100
50
-100
2.5
5
2
4.5
160
50
750
1.5
0.5
150
3
1.7
0.3
0
Max
6
115
70
-1
-70
5.15
-1
4.68
900
15
Unit
V
V
mV
mV
µA
mA
mA
µs
V
µs
µA
V
°C
°C
Hz
kHz
V
V
µA
V
V
V
V
mA
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