L9347DIE1 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'L9347DIE1' PDF : 21 Pages View PDF
L9347
ELECTRICAL CHARACTERISTCS: (continued)
(Vs = 4.8 to 18V; Tj = -40 to 150°C unless otherwise specified)
Symbol
Parameter
Test Condition
VZ Z-diode clamping voltage
IQ ≥ 100mA
IPD
IQlk
Timing
Output pull down current
Output leakage current
VEN = H, VIN = L
VEN = L; VQ = 20V
tON Output ON delay time
tOFF Output OFF delay time channel
tOFFREG Output OFF delay time regulator
tr
Output rise time
tf
Output fall time
tsf Short error detection filter time
IQ = 1A
IQ = 1A
(5)
IQ = 1A
IQ = 1A
fCLK = 250kHz DC = 50%(5)
tlf
Long error detection filter time
tSCP Short circuit switch-OFF delay time
fCLK = 250kHz DC = 50%(5)
(5)
tD Status delay time
tRE Regulation error status delay time
(5)
(5)
(reg. channels only)
tDreg Output off status delay time
(5)
(reg. channels only
Reg. Current Accuracy (reg. channels only)
IQ3/Q4
IQ3/Q4
Minimum current
Maximum current
DC = 10%
DC = 90%
IREG Max. regulation deviation @
DC 10% - 90%
∆IQ3/Q4 Min. quant. step
Frequencies
250mA < IQ3/Q4 < 400mA
400mA ≤ IQ3/Q4 ≤ 800mA
800mA < IQ3/Q4 < 2.25A
CLK frequency
crystal-controlled
Input PWM frequency
(reg. channels only)
Min.
45
10
Typ.
0
5
0
10
528
0.5
1.5
0.5
1.5
4
16
4
896
10
528
200 250
2
2.25
5
250
2
(1) This parameter will not be tested but assured by design
(2) Short circuit between two digital outputs (one in high the other in low state) will lead to the defined result "LOW"
(3) Measured chip, bond wires not included
(4) Measured on Power SO-36 devices
(5) Digital filtered with external clock, only functional test
Max.
60
150
5
20
30
8
8
8
32
30
1024
300
2.5
±10
±6
±10
Unit
V
µA
µA
µs
µs
µs
µs
µs
µs
µs
µs
us
ms
µs
mA
A
%
%
%
mA
kHz
kHz
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