L99H01
Electrical specifications
Table 12. Inputs: CSN, CLK, PWM, DIR, EN and DI
Item Symbol
Parameter
Test condition
Min.
Typ.
Max. Unit
12.1
12.2
12.3
12.4
12.5
Vin L Low-level input voltage
0.3 * VCC 0.4 * VCC
V
Vin H High-level input voltage
0.6 * VCC 0.7 * VCC V
Vin Hyst Input voltage hysteresis
0.1 * VCC
V
ICSN in Pull-up current at input CSN VCSN = VCC - 1.5 V
-50
-25
-10
µA
ICLK in
Pull-down current at input
CLK
VCLK = 1.5 V
10
35
50
µA
12.6
12.7
12.8
IDI in
IDIR in
IPWM in
Pull-down current at input DI VDI = 1.5 V
Pull-down current at input DIR VDIR = 1.5 V
Pull-down current at input
PWM
VPWM = 1.5 V
10
35
50
µA
10
35
50
µA
10
35
50
µA
12.9
REN in
Pull-down resistance at input
EN
VEN = VCC
100
210
480
kΩ
12.10
Cin(1)
Input capacitance at input
CSN, CLK, DI, DIR and PWM
0 V < VCC < 5.3 V
10
15
pF
1. Value of input capacity is not measured in production test. Parameter guaranteed by design.
Item Symbol
Table 13. Charge pump output
Parameter
Test condition
Min. Typ.
Max. Unit
13.1.1
13.1.2
13.1.3
13.2
13.3
13.4.1
13.4.2
13.5
VCP
Charge pump output
voltage
ICP
Charge pump output
current
VCP_LOW
Charge pump low
threshold voltage
VS = 6 V; ICP = 15 mA
VS + 6 VS + 7 VS + 7.5 V
VS = 10 V; ICP = 15 mA
VS + 11 VS + 12 VS + 13.5 V
VS > 12 V; ICP = 15 mA
VS + 11 VS + 12 VS + 13.5 V
fCP = fSYS_CLK / 32;
VS = 14 V; VCP = VS + 10 V
26
38
48
mA
VS + 4.5 VS + 5 VS + 5.5 V
fSYS_CLK
TCP
Clock frequency
(internal oscillator)
Charge pump low filter
time
VCC = 5 V
VCC = 3 V
3
4
2.4
3.3
64
4.5 MHz
3.5 MHz
µs
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