LH28F008SC
8M (1M × 8) Flash Memory
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ADDRESSES (A) VIH
VIL
AIN
tAVAV
AIN
tAVEH
WE (E)
VIH
VIL
tWLEL tEHWH
tEHAX
tEHGL
OE (G)
VIH
VIL
tEHEL
tEHQV1, 2, 3, 4
CE (E)
VIH
VIL
tELEH
tDVEH
tEHDX
DATA (D/Q) VIH
VIL
HIGH-Z DIN
tPHEL
DIN
tEHRL
VALID
SRD
DIN
VIH
RY/BY (R) VIL
tPHHEH
tQVPH
VHH
RP (P) VIH
VIL
VPPH3, 2, 1
VPP (V) VPPLK
VIL
NOTES:
1. VCC power-up and standby.
2. Write block erase or byte write set-up.
3. Write block erase confirm or valid address and data.
4. Automated erase or program delay.
5. Read status register data.
6. Write Read Array command.
tVPEH
tQVVL
Figure 17. Alternate AC Waveform for CE » Controlled Write Operations
008SC-17
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