LH28F008SCB-L12 View Datasheet(PDF) - Sharp Electronics
Part Name
Description
MFG CO.
'LH28F008SCB-L12' PDF : 55 Pages View PDF
sharp
LHF08CH1
33
Sym.
VCC=5V±0.5V, 5V±0.25V, TA=0°C to +70°C
VCC=5V±0.25V LH28F008SC-L85(6)
Versions(5)
VCC=5V±0.5V
Parameter
Notes Min.
Max.
LH28F008SC-L90(7)
Min.
Max.
Unit
tAVAV Write Cycle Time
85
90
ns
tPHWL RP# High Recovery to WE# Going Low
2
1
1
µs
tELWL CE# Setup to WE# Going Low
0
0
ns
tWLWH WE# Pulse Width
50
50
ns
tPHHWH RP# VHH Setup to WE# Going High
2
100
100
ns
tVPWH VPP Setup to WE# Going High
2
100
100
ns
tAVWH Address Setup to WE# Going High
3
40
40
ns
tDVWH Data Setup to WE# Going High
3
40
40
ns
tWHDX Data Hold from WE# High
5
5
ns
tWHAX Address Hold from WE# High
5
5
ns
tWHEH CE# Hold from WE# High
0
0
ns
tWHWL WE# Pulse Width High
25
25
ns
tWHRL WE# High to RY/BY# Going Low
90
90
ns
tWHGL Write Recovery before Read
0
0
ns
tQVVL VPP Hold from Valid SRD, RY/BY# High
2,4
0
0
ns
tQVPH RP# VHH Hold from Valid SRD, RY/BY#
High
2,4
0
0
ns
NOTES:
1. Read timing characteristics during block erase, byte write and lock-bit configuration operations are the same as
during read-onry operations. Refer to AC Characteristics for read-only operations.
2. Sampled, not 100% tested.
3. Refer to Table 4 for valid AIN and DIN for block erase, byte write, or lock-bit configuration.
4. VPP should be held at VPPH1/2/3 (and if necessary RP# should be held at VHH) until determination of block erase,
byte write, or lock-bit configuration success (SR.1/3/4/5=0).
5. See Ordering Information for device speeds (valid operational combinations).
6. See Transient Input/Output Reference Waveform and Transient Equivalent Testing Load Circuit (High Seed
Configuration) for testing characteristics.
7. See Transient Input/Output Reference Waveform and Transient Equivalent Testing Load Circuit (Standard
Configuration) for testing characteristics.
Rev. 1.3
Share Link: 
