LH28F016LLT-15 View Datasheet(PDF) - Sharp Electronics
Part Name
Description
MFG CO.
'LH28F016LLT-15' PDF : 29 Pages View PDF
16M (1M × 16, 2M × 8) Flash Memory
LH28F016LL
DC Characteristics (Continued)
VCC = 3.3 V ± 0.3 V, TA = 0°C to +70°C
SYMBOL
PARAMETER
IPPR VPP Read Current
IPPW VPP Write Current
TYPE
50
IPPE VPP Erase Current
30
IPPES
VIL
VIH
VPP Erase Suspend
Current
Input Low Voltage
Input High Voltage
VOL Output Low Voltage
VOH1
VOH2
Output High Voltage
VPPL
VPP during Normal
Operations
VPPH
VPP during Write/Erase
Operations
5.0
VLKO
VCC Erase/Write
Lock Voltage
MIN.
MAX. UNITS
TEST CONDITIONS
5
µA VPP > VCC
**
mA
VPP = VPPH, Word/Byte
Write in Progress
65
mA
VPP = VPPH,
Block Erase in Progress
200
µA
VPP = VPPH,
Block Erase Suspended
-0.3
0.8
V
2.0
VCC + 0.3 V
0.4
V
VCC = VCC MIN. and
IOL = 4 mA
2.4
V
IOH = 2.0 mA
VCC = VCC MIN.
VCC - 0.2
V
IOH = 100 µA
VCC = VCC MIN.
0.0
5.5
V
4.5
5.5
V
2.0
V
NOTE
1
1
1
1
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at VCC = VPP = 3.3 V, T = 25°C.
All IPP stands for outside inductor's current.
2. ICCES is specified with the device de-selected. If the device is read while in erase suspend mode, current draw is the sum of
ICCES and ICCR.
3. Automatic Power Saving (APS) reduces ICCR to less than 1 mA in Static operation.
**To be Determined
VCC
LX
28F016LLT-8
Figure 8. Transient Equivalent Testing
Load Circuit (VCC = 3.3 V)
17
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