LH28F016SAT-70 View Datasheet(PDF) - Sharp Electronics
Part Name
Description
MFG CO.
'LH28F016SAT-70' PDF : 36 Pages View PDF
LH28F016SA
16M (1M × 16, 2M × 8) Flash Memory
CEX (E)
tELWL
tWHEH
WE (W)
tAVWL
tWLWH
tWHAX
tWHWL
ADDRESSES (A)
VALID
tDVWH
tWHDX
DATA (D/Q)
HIGH-Z
DIN
Figure 16. Page Buffer Write Timing Waveforms
28F016SAT-16
Erase and Word/Byte Write Performance
VCC = 3.3 V ± 0.3 V, TA = 0°C to +70°C
SYMBOL
PARAMETER
tWHRH1
tWHRH2
tWHRH3
Word/Byte Write Time
Block Write Time
Block Write Time
Block Erase Time
TYP.(1)
9
0.6
0.3
0.8
MIN.
MAX. UNITS
TEST CONDITIONS
µs
2.1
s Byte Write Mode
1.0
s Word Write Mode
10
s
Full Chip Erase Time
25.6
s
NOTE
2
2
2
2
2
VCC = 5.0 V ± 0.5 V, TA = 0°C to +70°C
SYMBOL
PARAMETER
tWHRH1
tWHRH2
tWHRH3
Word/Byte Write Time
Block Write Time
Block Write Time
Block Erase Time
TYP.(1)
6
0.4
0.2
0.6
Full Chip Erase Time
19.2
NOTES:
1. 25°C, VPP = 12.0 V Sampled.
2. Excludes System-Level Overhead.
MIN.
MAX. UNITS
TEST CONDITIONS
µs
2.1
s Byte Write Mode
1.0
s Word Write Mode
10
s
s
NOTE
2
2
2
2
2
34
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