LH28F016SUT-70 View Datasheet(PDF) - Sharp Electronics
Part Name
Description
MFG CO.
'LH28F016SUT-70' PDF : 37 Pages View PDF
16M (1M × 16, 2M × 8) Flash Memory
LH28F016SU
AC Characteristics for CE » - Controlled Command Write Operations1
TA = 0°C to +70°C
SYMBOL
PARAMETER
tAVAV
tPHWL
tVPEH
tWLEL
tAVEH
tDVEH
tELEH
tEHDX
tEHAX
tEHWH
tEHEL
tGHEL
tEHRL
tRHPL
tPHEL
tEHGL
tQVVL
tEHQV1
tEHQV2
Write Cycle Time
RP » Setup to WE Going Low
VPP Set up to CE» Going High
WE Setup to CE » Going Low
Address Setup to CE» Going High
Data Setup to CE» Going High
CE » Pulse Width
Data Hold from CE» High
Address Hold from CE » High
WE Hold from CE » High
CE » Pulse Width High
Read Recovery before Write
CE » High to RY »/BY » Going Low
RP » Hold from Valid Status Register
(CSR, GSR, BSR) Data and RY »/BY » High
RP » High Recovery to CE » Going Low
Write Recovery before Read
VPP Hold from Valid Status Register
(CSR, GSR, BSR) Data and RY »/BY » High
Duration of Byte Write Operation
Duration of Block Erase Operation
VCC = 3.3 V ± 0.3 V
TYP. MIN. MAX.
150
480
100
0
75
75
75
10
10
10
75
0
100
0
1
120
0
12
5
0.3
UNITS NOTE
ns
ns
3
ns
3
ns
ns
2, 6
ns
2, 6
ns
ns
2
ns
2
ns
ns
ns
ns
ns
3
µs
ns
µs
µs
4, 5
s
4
31
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