LH28F400SUN-LC15 View Datasheet(PDF) - Sharp Electronics
Part Name
Description
MFG CO.
'LH28F400SUN-LC15' PDF : 37 Pages View PDF
4M (512K × 8, 256K × 16) Flash Memory
LH28F400SU-LC
AC Characteristics for CE » - Controlled Command Write Operations1
VCC = 3.3 V ± 0.3 V, TA = 0°C to +70°C
SYMBOL
PARAMETER
tAVAV
tPHWL
tVPEH
tWLEL
tAVEH
tDVEH
tELEH
tEHDX
tEHAX
tEHWH
tEHEL
tGHEL
tEHRL
tRHPL
Write Cycle Time
RP » Setup to WE Going Low
VPP Set up to CE » Going High
WE Setup to CE » Going Low
Address Setup to CE» Going High
Data Setup to CE» Going High
CE » Pulse Width
Data Hold from CE» High
Address Hold from CE » High
WE Hold from CE » High
CE » Pulse Width High
Read Recovery before Write
CE » High to RY »/BY » Going Low
RP » Hold from Valid Status Register
Data and RY»/BY» High
tPHEL
tEHGL
tQVVL
tEHQV1
tEHQV2
RP » High Recovery to CE» Going Low
Write Recovery before Read
VPP Hold from Valid Status Register
Data and RY »/BY » High
Duration of Byte Write Operation
Duration of Block Erase Operation
TYP.
20
MIN.
150
480
100
0
110
110
110
10
10
10
75
0
0
1
120
0
8
0.3
MAX.
100
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTE
3
3
2, 6
2, 6
2
2
ns
3
µs
ns
µs
µs
4, 5
s
4
NOTES:
1. Read timing during write and erase are the same as for normal read.
2. Refer to command definition tables for valid address and data values.
3. Sampled, but not 100% tested.
4. Write/Erase durations are measured to valid Status Register (CSR) Data.
5. Byte Write operations are typically performed with 1 Programming Pulse.
6. Address and Data are latched on the rising edge of CE » for all Command Write operations.
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