LH28F400SUN-LC15 View Datasheet(PDF) - Sharp Electronics
Part Name
Description
MFG CO.
'LH28F400SUN-LC15' PDF : 37 Pages View PDF
LH28F400SU-LC
4M (512K × 8, 256K × 16) Flash Memory
DEEP
POWER-DOWN
ADDRESSES (A) VIH
(NOTE 1)
VIL
ADDRESSES (A) VIH
(NOTE 2)
VIL
WRITE
DATA-WRITE
OR ERASE
SETUP COMMAND
WRITE VALID
ADDRESS AND DATA
(DATA-WRITE) OR
ERASE CONFIRM
COMMAND
AIN
tAVAV
tAVEH
tEHAX
AIN
tAVAV
tAVEH tEHAX
AUTOMATED
DATA-WRITE
OR ERASE
DELAY
(NOTE 3)
READ
COMPATIBLE
STATUS
REGISTER DATA
WE (W) VIH
VIL
OE (G) VIH
VIL
CE (E) VIH
VIL
tEHWH
tWLEL
tEHEL
tELEH
tEHDX
tEHGL
tEHQV 1, 2
tGHEL
DATA (D/Q) VIH
VIL
HIGH-Z
tPHEL
tDVEH
DIN
DIN
tEHRL
DIN
DOUT
DIN
RY/BY (R) VOH
VOL
tRHPL
RP (P) VIH
VIL
tVPEH
(NOTE 4)
tQVVL
VPP
(V)
VPPH
VPPL
NOTES:
1. This address string depicts Data-Write/Erase cycles with corresponding verification via ESRD.
2. This address string depicts Data-Write/Erase cycles with corresponding verification via CSRD.
3. This cycle is invalid when using CSRD for verification during Data-Write/Erase operations.
4. RP low transition is only to show tRHPL; not valid for above Read and Write cycles.
Figure 20. Alternate AC Waveforms for Command Write Operations
28F400SUH-LC15-20
32
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