LH28F800SGHB-L10 View Datasheet(PDF) - Sharp Electronics
Part Name
Description
MFG CO.
'LH28F800SGHB-L10' PDF : 45 Pages View PDF
LH28F800SG-L/SGH-L (FOR TSOP, CSP)
6.2.5 AC CHARACTERISTICS FOR WE#-CONTROLLED WRITE OPERATIONS (NOTE 1)
• VCC = 2.7 to 3.0 V, TA = 0 to +70˚C or –40 to +85˚C
VERSIONS
SYMBOL
PARAMETER
tAVAV Write Cycle Time
tPHWL RP# High Recovery to WE# Going Low
tELWL CE# Setup to WE# Going Low
tWLWH WE# Pulse Width
tPHHWH RP# VHH Setup to WE# Going High
tVPWH VPP Setup to WE# Going High
tAVWH Address Setup to WE# Going High
tDVWH Data Setup to WE# Going High
tWHDX Data Hold from WE# High
tWHAX Address Hold from WE# High
tWHEH CE# Hold from WE# High
tWHWL WE# Pulse Width High
tWHRL WE# High to RY/BY# Going Low
tWHGL Write Recovery before Read
tQVVL VPP Hold from Valid SRD, RY/BY# High
tQVPH RP# VHH Hold from Valid SRD, RY/BY# High
NOTE
2
2
2
3
3
2, 4
2, 4
LH28F800SG-L70
LH28F800SGH-L70
MIN.
MAX.
100
1
10
50
100
100
50
50
5
5
10
30
100
0
0
0
LH28F800SG-L10
LH28F800SGH-L10 UNIT
MIN.
MAX.
120
ns
1
µs
10
ns
50
ns
100
ns
100
ns
50
ns
50
ns
5
ns
5
ns
10
ns
30
ns
100 ns
0
ns
0
ns
0
ns
• VCC = 3.3±0.3 V, TA = 0 to +70˚C or –40 to +85˚C
VERSIONS
SYMBOL
PARAMETER
tAVAV Write Cycle Time
tPHWL RP# High Recovery to WE# Going Low
tELWL CE# Setup to WE# Going Low
tWLWH WE# Pulse Width
NOTE
2
LH28F800SG-L70
LH28F800SGH-L70
MIN.
MAX.
85
1
10
50
LH28F800SG-L10
LH28F800SGH-L10 UNIT
MIN.
MAX.
100
ns
1
µs
10
ns
50
ns
tPHHWH RP# VHH Setup to WE# Going High
2
100
100
ns
tVPWH VPP Setup to WE# Going High
2
100
100
ns
tAVWH Address Setup to WE# Going High
3
50
50
ns
tDVWH Data Setup to WE# Going High
3
50
50
ns
tWHDX Data Hold from WE# High
5
5
ns
tWHAX Address Hold from WE# High
5
5
ns
tWHEH CE# Hold from WE# High
10
10
ns
tWHWL WE# Pulse Width High
30
30
ns
tWHRL WE# High to RY/BY# Going Low
100
100 ns
tWHGL Write Recovery before Read
0
0
ns
tQVVL VPP Hold from Valid SRD, RY/BY# High
2, 4
0
0
ns
tQVPH RP# VHH Hold from Valid SRD, RY/BY# High 2, 4
0
0
ns
NOTES :
1. Read timing characteristics during block erase, word
3. Refer to Table 3 for valid AIN and DIN for block erase,
write and lock-bit configuration operations are the same
word write, or lock-bit configuration.
as during read-only operations. Refer to Section 6.2.4
4. VPP should be held at VPPH1/2/3 (and if necessary RP#
"AC CHARACTERISTICS" for read-only operations.
should be held at VHH) until determination of block erase,
2. Sampled, not 100% tested.
word write, or lock-bit configuration success (SR.1/3/4/5 = 0).
- 34 -
Share Link: 
