LH28F800SUT-70 View Datasheet(PDF) - Sharp Electronics
Part Name
Description
MFG CO.
'LH28F800SUT-70' PDF : 38 Pages View PDF
LH28F800SU
8M (512K × 16, 1M × 8) Flash Memory
AC Characteristics - Read Only Operations1 (Continued)
TA = 0°C to +70°C
SYMBOL
PARAMETER
tAVAV
tAVEL
tAVGL
tAVQV
tELQV
tPHQV
tGLQV
tELQX
tEHQZ
tGLQX
tGHQZ
tOH
tFLQV
tFHQV
tFLQZ
tELFL
tELFH
Read Cycle Time
Address Setup to CE» Going Low
Address Setup to OE» Going Low
Address to Output Delay
CE » to Output Delay
RP » High to Output Delay
OE » to Output Delay
CE » to Output in Low Z
CE » to Output in High Z
OE » to Output in Low Z
OE » to Output in High Z
Output Hold from Address, CE» or
OE » change, whichever occurs first
BYTE to Output Delay
BYTE Low to Output in High Z
CE » Low to BYTE High or Low
VCC = 5.0 V ± 0.25V VCC = 5.0 V ± 0.5V
UNITS
MIN.
MAX.
MIN.
MAX.
70
80
ns
10
10
ns
0
0
ns
70
80
ns
70
80
ns
400
480
ns
30
35
ns
0
0
ns
25
30
ns
0
0
ns
25
30
ns
0
0
ns
70
80
ns
25
30
ns
5
5
ns
NOTE
3, 4
3, 4
2
2
3
3
3
3
3
3
3
3
NOTES:
1. See AC Input/Output Reference Waveforms for timing measurements.
2. OE » may be delayed up to tELQV - tGLQV after the falling edge of CE » without impact on tELQV.
3. Sampled, not 100% tested.
4. This timing parameter is used to latch the correct BSR data onto the outputs.
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