LHF16KAP View Datasheet(PDF) - Sharp Electronics

Part Name

Description

MFG CO.

LHF16KAP

Flash Memory 16M (2MB × 8 / 1MB × 16))

Sharp Electronics 

Prev 41 42 43 44 45 46 47 48 49 50 Next

sharp

LHF16KAP

44

6.2.8 BLOCK ERASE, FULL CHIP ERASE, (MULTI) WORD/BYTE WRITE AND BLOCK

LOCK-BIT CONFIGURATION PERFORMANCE(3)

Sym.

VCC=5V±0.5V, 5V±0.25V, TA=-40°C to +85°C

VPP=4.5V-5.5V

Parameter

Notes Typ.(1)

Max.

Unit

tWHQV1

tEHQV1

tWHQV1

tEHQV1

Word/Byte Write Time

(using W/B write, in word mode)

Word/Byte Write Time

(using W/B write, in byte mode)

Word/Byte Write Time

(using multi word/byte write)

2

9.24

120

µs

2

9.24

120

µs

2

2

120

µs

Block Write Time

(using W/B write, in word mode)

2

0.31

3.7

s

Block Write Time

(using W/B write, in byte mode)

2

0.61

7.5

s

Block Write Time

(using multi word/byte write)

2

0.13

1.5

s

tWHQV2

tEHQV2

Block Erase Time

Full Chip Erase Time

2

0.34

10

s

10.9

320

s

tWHQV3

tEHQV3

tWHQV4

tEHQV4

tWHRH1

tEHRH1

tWHRH2

tEHRH2

NOTES:

Set Block Lock-Bit Time

Clear Block Lock-Bits Time

Write Suspend Latency Time to Read

Erase Suspend Latency Time to Read

2

9.24

120

µs

2

0.34

10

s

5.6

7

µs

9.4

13.1

µs

1. Typical values measured at TA=+25°C and nominal voltages. Assumes corresponding block lock-bits are not

set. Subject to change based on device characterization.

2. Excludes system-level overhead.

3. Sampled but not 100% tested.

Rev. 2.0

Share Link: